Precursors

Triethyl indium can be used to prepare semiconductor materials, such as transparent conductive thin film

Electronic grade TEOS is mainly used in the chemical vapor deposition (CVD) process of IC

High purity Triethylstibane is a supporting material for epitaxial growth using metal organic chemical vapor

Pentakis(dimethylamino) tantalum, PDMAT is a soild tantalum precursor for TaN barrier layers to prevent copper

As an important silicon-based precursor material, DIPAS is widely used in vapor deposition and atomic

Bis(diethylamino)silane is available in high purity and electronic grade forms suitable for semiconductor processing and

Pentakis(dimethylamino)tantalum (PDMAT) is most widely used as a tantalum source for TaN barrier

Diiodosilane, as a silicon-based precursor material, can rapidly form a uniform and dense silicon nitride